Semiconductor light emitting device

ABSTRACT

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

The application is a Continuation of co-pending application Ser. No.12/950,449 filed on Nov. 19, 2010, which is a Continuation ofapplication Ser. No. 12/580,828 filed on Oct. 16, 2009, now U.S. Pat.No. 7,859,003, and for which priority is claimed under 35 U.S.C. 120;and this application claims priority of Application No. 10-2008-0101642filed in the Republic of Korea on Oct. 16, 2008 under 35 U.S.C. 119; theentire contents of all are hereby incorporated by reference.

BACKGROUND

The embodiment relates a semiconductor light emitting device.

Group III-V nitride semiconductors are spotlighted as core materials oflight emitting diodes (LEDs) or laser diodes (LDs) due to physical andchemical characteristics. The group III-V nitride semiconductors mainlycomprise semiconductor materials having a composition formula ofIn_(x)Al_(y)Ga_(1−x−y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

The LED is a kind of a semiconductor device, which transmits/receivessignals by converting electricity into infrared rays or light using thecharacteristic of the compound semiconductor and is used as a lightsource.

The LED and LD employing such nitride semiconductors have been mainlyused in light emitting devices to obtain light, and have been applied tovarious appliances (e.g., a light emitting part of a keypad of aportable phone, an electric bulletin board, an illumination device) as alight source.

SUMMARY

The embodiment provides a semiconductor light emitting device comprisingreflective electrode layers provided on/under a light emittingstructure.

The embodiment provides a semiconductor light emitting device comprisingelectrode parts having a plurality of openings on/under a light emittingstructure.

The embodiment provides a semiconductor light emitting device, in whichchips can be die-bonded through four side walls or an angle of 360°without using a wire by providing a passivation layer at the outside ofthe light emitting structure.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a plurality of compoundsemiconductor layers; a passivation layer at the outside of the lightemitting structure; a first electrode layer on the light emittingstructure; and a second electrode layer under the light emittingstructure.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure comprising a first conductive semiconductorlayer, an active layer on the first conductive semiconductor layer, anda second conductive semiconductor layer on the active layer; a firstelectrode layer comprising a first opening part on the second conductivesemiconductor layer; a first conductive support member comprising thefirst opening part on the first electrode layer; a second electrodelayer under the first conductive semiconductor layer; and a secondconductive support member under the second electrode layer.

An embodiment provides a semiconductor light emitting device comprisinga light emitting structure comprising a first conductive semiconductorlayer, an active layer, and a second conducive semiconductor layer, afirst electrode layer comprising a reflective electrode on the secondconductive semiconductor layer, a first conductive support member underthe first electrode layer, a second electrode layer comprising areflective electrode under the first conductive semiconductor layer, asecond conductive support member under the second electrode layer, atleast one opening part on and/or under the light emitting structure, anda passivation layer around a circumference portion of the light emittingstructure.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a semiconductor light emittingdevice according to a first embodiment;

FIG. 2 is a sectional side view of FIG. 1;

FIGS. 3 to 11 are views showing the manufacturing process of thesemiconductor light emitting device according to the first embodiment;

FIG. 12 is a sectional side view showing a semiconductor light emittingdevice according to a second embodiment; and

FIG. 13 is a sectional side view showing a semiconductor light emittingdevice according to a third embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the description of the embodiments, it will be understood that, whena layer (or film), a region, a pattern, or a structure is referred to asbeing “on” or “under” another substrate, another layer (or film),another region, another pad, or another pattern, it can be “directly” or“indirectly” on the other substrate, layer (or film), region, pad, orpattern, or one or more intervening layers may also be present. Such aposition of the layer has been described with reference to the drawings.

Hereinafter, embodiments will be described with respect to accompanyingdrawings. In the description about the embodiment, the size ofcomponents shown in the accompanying drawings is for an illustrativepurpose only, but the embodiment is not limited thereto.

FIG. 1 is a perspective view showing a semiconductor light emittingdevice according to a first embodiment, and FIG. 2 is a sectional sideview of FIG. 1.

Referring to FIGS. 1 and 2, a semiconductor light emitting device 100comprises a light emitting structure 135, a first passivation layer 140,a second passivation layer 170, a first electrode layer 150, a secondelectrode layer 152, a first conductive support member 160, and a secondconductive support member 162.

The semiconductor light emitting device 100 may be realized using lightemitting diodes (LEDs) comprising compound semiconductors of groupsIII-V elements. The LEDs may be color LEDs emitting blue, green or redlight or ultraviolet (UV) LEDs. Various LEDs can be employed within thetechnical scope of the embodiments.

The light emitting structure 135 comprises a first conductivesemiconductor layer 110, an active layer 120, and a second conductivesemiconductor layer 130.

The first conductive semiconductor layer 110 may comprise one ofcompound semiconductors of group III-V elements doped with a firstconductive dopant. For example, the first conductive semiconductor layer110 may comprise one selected from the group consisting of GaN, AlN,AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, andAlGaInP. When the first conductive semiconductor is an N-typesemiconductor, the first conductive dopant comprises an N-type dopantsuch as Si, Ge, Sn, Se, or Te. The first conductive semiconductor layer110 may have a signal layer or multiple layers, but the embodiment isnot limited thereto. The first conductive semiconductor layer 110 may beprovided on a bottom surface formed thereof with concave-convexroughness in order to improve light extraction efficiency.

The active layer 120 is formed on the first conductive semiconductorlayer 110, and may have a single quantum well structure or amulti-quantum well structure. The active layer 120 may have thearrangement of a well layer and a barrier layer using compoundsemiconductor materials of group III-V elements. For example, the activelayer 120 may have the arrangement of an InGaN well layer/a GaN barrierlayer, an InGaN well layer/an AlGaN barrier layer, or an InGaN Welllayer/an InGaN barrier layer.

A conductive clad layer may be formed on and/or under the active layer120 and may comprise an AlGaN-based semiconductor.

The second conductive semiconductor layer 130 is formed on the activelayer 120. The second conductive semiconductor layer 130 may compriseone selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP which are compoundsemiconductors of III-V group elements doped with a second conductivedopant. When the second conductive semiconductor is a P-typesemiconductor, the second conductive dopant comprises a P-type dopantsuch as Mg and Zn. The second conductive semiconductor layer 130 mayhave a single layer or a multi-layer, but the embodiment is not limitedthereto.

The light emitting structure 135 may comprise an N-type semiconductorlayer or a P-type semiconductor layer on the second conductivesemiconductor layer 130. In addition, the first conductive semiconductorlayer 110 may be realized as a P-type semiconductor layer, and thesecond conductive semiconductor layer 130 may be realized as an N-typesemiconductor layer. Accordingly, the light emitting structure 135 mayhave at least one of an N-P junction structure, a P-N junctionstructure, an N-P-N junction structure, and a P-N-P junction structure.

The first electrode layer 150 is provided on the light emittingstructure 135, and the first conductive support member 160 is providedon the first electrode layer 150. A plurality of first openings 155 areformed in the first electrode layer 150 and the first conductive supportmember 160. The first openings 155 are provided in an inside pattern 165of the first electrode layer 150 and the first conductive support member160. For example, the first openings 155 may have a matrix-shape patternor a stripe-shape pattern.

An ohmic contact layer (not shown) may be interposed between the firstelectrode layer 150 and the second conductive semiconductor layer 130.The ohmic contact layer (not shown) may have the form of a layer or apattern. The ohmic contact layer may comprise at least one selected fromthe group consisting of indium tin oxide (ITO), indium zinc oxide (IZO),indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indiumgallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminumzinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO),IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag, Ni, Al, Rh, Pd,Ir, Ru, Mg, Zn, Pt, Au, Hf.

The first electrode layer 150 is formed inside a top surface of thesecond conductive semiconductor layer 130, and the first passivationlayer 140 surrounds a circumference portion of the top surface of thesecond conductive semiconductor layer 130.

The first electrode layer 150 is formed on the first passivation layer140, and an outer portion of the first passivation layer 140 may extendoutwardly from an outside of the light emitting structure 135.Accordingly, the first passivation layer 140 spaces the first electrodelayer 150 apart from the light emitting structure 135.

The first passivation layer 140 may have a continuous pattern shape suchas a ring shape, a band shape, or a frame shape. For example, the firstpassivation layer 140 may have a circular shape or a polygonal shape.

The second electrode layer 152 is provided under the light emittingstructure 135. The second conductive support member 162 is providedunder the second electrode layer 152. A plurality of second openings 156are formed in the second electrode layer 152 and the second conductivesupport member 162. The second openings 156 are provided in an insidepattern 166 of the second electrode layer 152 and the second conductivesupport member 162. For example, the second openings 156 may be formedby a matrix-shape pattern or a stripe-shape pattern.

The first and second openings 155 and 156 may have a circular or apolygonal surface shape. The first and second openings 155 and 156 maybe used as a path to emit light upward or downward. The first and secondopenings 155 and 156 may have various patterns within the technicalscope of the embodiment.

An ohmic contact layer (not shown) may be interposed between the secondelectrode layer 152 and the first conductive semiconductor layer 110.The ohmic contact layer (not shown) may have the form of a layer or apattern. The ohmic contact layer may comprise at least one selected fromthe group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO,IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO.

The second electrode layer 152 is provided inside a bottom surface ofthe first conductive semiconductor layer 110, and a lower portion 172 ofthe second passivation layer 170 is provided around a circumferenceportion of the bottom surface of the first conductive semiconductorlayer 110. The second passivation layer 170 surrounds a circumferenceportion of the light emitting structure 135 to prevent short between thelayers 110, 120, and 130 on sidewalls of the light emitting structure135.

The second electrode layer 152 may be formed under the secondpassivation layer 170, but the embodiment is not limited thereto.

The second passivation layer 170 may have a continuous pattern shapesuch as a ring shape, a band shape, or a frame shape.

The first electrode layer 150 and the second electrode layer 152 mayserve as a reflective electrode layer, and may comprise one selectedfrom the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au,Hf, and the combination thereof. The first and second electrode layers150 and 152 may have the form of a layer or several patterns, but theembodiment is not limited thereto.

The first and second passivation layers 140 and 170 may comprise one ofSiO₂, Si₃N₄, Al₂O₃, TiO₂, SiO_(x), and SiN_(x). The first and secondpassivation layers 140 and 170, which are transmittive passivationlayers, may be used as a path to emit light in a lateral direction of adevice.

The first passivation layer 140 may comprise at least one of ITO, IZO,IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Auand Ni/IrOx/Au/ITO which are transmittive conductive materials.

The first and second conductive support members 160 and 162 may compriseCu, Au, Ni, Mo, Cu—W, or carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC,SiGe, GaN). The first and second conductive support members 160 and 162may be formed through an electrolytic plating scheme or in the form of asheet, but the embodiment is not limited thereto.

The first electrode layer 150 and the first conductive support member160 may serve as one electrode part having a predetermined thickness,and the second electrode layer 152 and the second conductive supportmember 162 may serve as the other electrode part having a predeterminedthickness.

Since the first and second conductive support members 160 and 162 areprovided at both sides of each side surface P1 or P2, the semiconductorlight emitting device 100 can be die-bonded through one side surface andpackaged. In this case, the first passivation layer 140 and the secondpassivation layer 170 can cut off electrical contact between the firstand second conductive support members 160 and 162.

In the semiconductor light emitting device 100, the first electrodelayer 150 and the first conductive support member 160 serve as a secondelectrode. The second electrode layer 152 and the second conductivesupport member 162 serve as a first electrode.

Since outer surfaces of the first and second conductive support members160 and 162 and the first and second passivation layers 140 and 170 formthe same plane, the outer surfaces may be used as a bonding area.

The semiconductor light emitting device 100 can emit light through fourside surfaces and top and bottom surfaces. Accordingly, thesemiconductor light emitting device 100 can emit light in alldirections.

According to the embodiment, one of the first and second openings 155and 156 is removed to increase an amount of light in the oppositedirection.

One of the side surfaces P1 and P2 of the semiconductor light emittingdevice 100 may be mounted on an electrode of a main substrate through asurface mount technology (SMT) without using a wire. Accordingly, fourside surfaces P1 and P2 of the semiconductor light emitting device 100can be mounted in such a manner that light is emitted in all directions.

FIGS. 3 to 11 are sectional views showing the manufacturing process ofthe semiconductor light emitting device according to the firstembodiment.

Referring to FIGS. 3 and 4, after a substrate 101 is loaded on growthequipment, a compound semiconductor layer of group II-VI elements isformed on the substrate 101.

The grown equipment may comprise an E-beam evaporator, a physical vapordeposition (PVD) apparatus, a chemical vapor deposition (CVD) apparatus,a plasma laser deposition (PLD) apparatus, a dual-type thermalevaporator, a sputtering apparatus, or a metal organic chemical vapordeposition (MOCVD) apparatus, but the embodiment is not limited thereto.

The substrate 101 may comprise one selected from the group consisting ofAl₂O₃, GaN, SiC, ZnO, Si, GaP, InP, Ga₂O₃, a conductive substrate, andGaAs. The substrate 101 may be provided thereon with a concave-convexpattern. In addition, the substrate 101 may be formed thereon with alayer or a pattern formed using a compound semiconductor of group II toVI elements. For example, the substrate 101 may be formed thereon withat least one of a ZnO layer (not shown), a buffer layer (not shown), andan undoped semiconductor layer (not shown).

The buffer layer and the undoped semiconductor layer may be formed usingcompound semiconductors of III-V group elements. The buffer layerreduces a lattice constant difference from the substrate 101. Theundoped semiconductor layer may be formed using an undoped GaN-basedsemiconductor.

The light emitting structure 135 comprising a plurality of compoundsemiconductor layers is formed on the substrate 101. The firstconductive semiconductor layer 110 is formed on the substrate 101, andthe active layer 120 is formed on the first conductive semiconductorlayer 110. The second conductive semiconductor layer 130 is formed onthe active layer 120.

The first conductive semiconductor layer 110 may comprise one selectedfrom the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, which are compoundsemiconductors of group III-V elements doped with the first conductivedopant. When the first conductive semiconductor is an N-typesemiconductor, the first conductive dopant comprises an N-type dopantsuch as Si, Ge, Sn, Se, or Te. The first conductive semiconductor layer110 may have a single layer or a multi-layer, but the embodiment is notlimited thereto.

The active layer 120 is formed on the first conductive semiconductorlayer 110, and may have a single quantum well structure or amulti-quantum well structure. The active layer 120 may have thearrangement of a well layer and a barrier layer using compoundsemiconductor materials of group III-V elements. For example, the activelayer 120 may have the arrangement of an InGaN well layer/a GaN barrierlayer.

A conductive clad layer may be formed on and/or under the active layer120 and may comprise an AlGaN-based semiconductor.

The second conductive semiconductor layer 130 is formed on the activelayer 120. The second conductive semiconductor layer 130 may compriseone selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN,InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP which are compoundsemiconductors of III-V group elements doped with a second conductivedopant. When the second conductive semiconductor is a P-typesemiconductor, the second conductive dopant comprises a P-type dopantsuch as Mg or Zn. The second conductive semiconductor layer 130 may havea single layer or a multi-layer, but the embodiment is not limitedthereto.

The first conductive semiconductor layer 110, the active layer 120, andthe second conductive semiconductor layer 130 may be defined as thelight emitting structure 135. In addition, a third conductivesemiconductor layer (e.g., an N-type semiconductor layer or a P-typesemiconductor layer) may be formed on the second conductivesemiconductor layer 130. Accordingly, the light emitting structure 135may have at least one of an N-P junction structure, a P-N junctionstructure, an N-P-N junction structure, and a P-N-P junction structure.

Referring to FIG. 4, the first passivation layer 140 is formed on thesecond conductive semiconductor layer 130 opened by a mask pattern (notshown). The first passivation layer 140 may be formed in a continuouscircular or polygonal pattern having a ring shape, a band shape, and aframe shape around a circumference portion of the top surface of thesecond conductive semiconductor layer 130. The first passivation layer140 may comprise one of SiO₂, Si₃N₄, Al₂O₃, TiO₂, SiO_(x), and SiN_(x).The first passivation layer 140 may comprise a transmittive insulatingmaterial for emitting light.

The first passivation layer 140 may comprise a transmittive layer. Thetransmittive layer may comprise at least one of ITO, IZO, IZTO, IAZO,IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au andNi/IrOx/Au/ITO.

Referring to FIGS. 5 and 6, the first electrode layer 150 is formed onthe second conductive semiconductor layer 130. The first electrode layer150 is formed on both the second conductive semiconductor layer 130 andthe first passivation layer 140. A first inside pattern 165A having thefirst openings 155 is formed on the second conductive semiconductorlayer 130 inside the first electrode layer 150.

The first inside pattern 165A of the first electrode layer 150 may be astripe-pattern or a matrix pattern. The second conductive semiconductorlayer 130 is exposed through the first openings 155.

The first openings 155 and the first inside pattern 165A of the firstelectrode layer 150 may be formed on a region which is open byperforming a selective etching process using a mask pattern. Inaddition, the first openings 155 and the first inside pattern 165A maybe formed by performing an etching process after the first electrodelayer 150 has been formed, but the embodiment is not limited thereto.

The first electrode layer 150 may serve as a reflective electrode layer,and the first electrode layer 150 may comprise Ag, Ni, Al, Rh, Pd, Ir,Ru, Mg, Zn, Pt, Au, Hf, or the selective combination thereof.

An ohmic contact layer (not shown) may be interposed between the firstelectrode layer 150 and the second conductive semiconductor layer 130.The ohmic contact layer may comprise a layer or a plurality of patterns,but the embodiment is not limited thereto. The ohmic contact layer maycomprise the transmittive conductive materials.

Referring to FIG. 6, the first conductive support member 160 is formedon the first electrode layer 150.

The first openings 155 of the electrode layer 150 are extended in theinside pattern 165 of the first conductive support member 160, and mayhave a circular or polygonal surface shape.

The first conductive support member 160 may serve as a base substrate,and may comprise Cu, Au, Ni, Mo, Cu—W, or carrier wafer (e.g., Si, Ge,GaAs, ZnO, SiC, SiGe, GaN). The first conductive support member 160 maybe formed through an electrolytic plating scheme or in the form of asheet, but the embodiment is not limited thereto.

The first electrode layer 150 and the first conductive support member160 may serve as one electrode part having a predetermined thickness

The first electrode layer 150 and the first conductive support member160 may the form of a layer or a pattern. The first conductive supportmember 160 may have a thickness of about 30 um to about 50 um, but theembodiment is not limited thereto. The first electrode layer 150 and thefirst conductive support member 160 may serve as one electrode part, butthe embodiment is not limited thereto.

Referring to FIGS. 6 and 7, after the first conductive support member160 is placed on a base, the substrate 101 is removed. The substrate 101may be removed through a physical and/or chemical scheme. The physicalscheme is a laser lift off (LLO) scheme to separate the substrate 101 byirradiating a laser beam having a predetermined wavelength band to thesubstrate 101. The chemical scheme is to separate the substrate 101 byremoving an additional semiconductor layer (e.g., buffer layer) using awet etch solution when the additional semiconductor layer is formedbetween the substrate 101 and the first conductive semiconductor layer110.

The surface of the first conductive semiconductor layer 110 having nosubstrate 101 may be polished through an inductively coupledplasma/reactive ion etching (ICP/RIE) scheme.

Referring to FIG. 8, a mesa etching is performed. The mesa etching mayemploy a dry etching scheme and/or a wet etching scheme, but theembodiment is not limited thereto.

Outer portions 105 of the light emitting structure 135 is etched throughthe mesa etching and removed. The first passivation layer 140 may beexposed through the etched region. A laser beam is irradiated to thefirst passivation layer 140, thereby preventing metallic fragmentsgenerated in the mesa etching from being introduced into the lightemitting structure 135 and preventing electrical short between the firstand second conductive semiconductor layers 110 and 130 caused by themetallic fragments.

Referring to FIG. 9, the second passivation layer 170 surrounds acircumference portion of the light emitting structure 135. The secondpassivation layer 170 is formed by using a mask pattern such that thesecond passivation layer 170 extends from a bottom surface of the firstpassivation layer 140 and surrounds a lower circumference portion of thefirst conductive semiconductor layer 110. Accordingly, since the lowerportion 172 of the second passivation layer 170 surrounds thecircumference portion of the first conductive semiconductor layer 110, abonding strength can be enhanced.

The second passivation layer 170 is formed on sidewalls of the lightemitting structure 135 to prevent short between layers due to externalfactors. The second passivation layer 170 may have the same material asthat of the first passivation layer 140. For example, the secondpassivation layer 170 may comprise one of SiO₂, Si₃N₄, Al₂O₃, TiO₂,SiO_(x), and SiN_(x) or a transmittive insulating material.

Referring to FIGS. 10 and 11, the second electrode layer 152 is formedunder the first conductive semiconductor layer 110. An outer portion ofthe second electrode layer 152 may extend downward from the secondpassivation layer 170.

A second inside pattern 166A having the second openings 156 is formed inthe second electrode layer 152. The second inside pattern 166A may havea stripe pattern or a matrix pattern. Such a pattern can be variouslychanged within the scope of the embodiment.

The second openings 156 are formed in the second inside pattern 166A toexpose a lower portion of the first conductive semiconductor layer 110.The second openings 156 may be formed through an etching process, or thesecond electrode layer 152 may be formed after forming a mask pattern inan opening area, but the embodiment is not limited thereto.

The second electrode layer 152 may serve as a reflective electrodelayer, and may comprise a material of the first electrode layer 150. Forexample, the second electrode layer 152 may comprise at least one of Al,Ag, Pd, Rh, and Pt or alloy thereof.

The second conductive support member 162 is formed under the secondelectrode layer 152, and may comprise a material of the first conductivesupport member 160. The second conductive support member 162 may beformed through an electrolytic plating scheme or in the form of a sheet,but the embodiment is not limited thereto. The second conductive supportmember 162 may have a thickness of about 30 um to about 50 um, but theembodiment is not limited thereto.

The second inside pattern 166A of the second conductive support member162 is formed by extending the second openings 156 of the secondelectrode layer 152. The second openings 156 may have a circular orpolygonal surface shape. The second openings 156 may various surfaceshapes within the scope of the embodiment.

Referring to FIG. 11, since the outer side surfaces of the first andsecond conductive support members 160 and 162, and the first and secondpassivation layers 140 and 170 are arranged on the same plane, fourouter side surfaces of the semiconductor light emitting device 100 canbe used as bonding areas of the semiconductor light emitting device 100.

Since the first and second conductive support members 160 and 162 arearranged at both sides of each side surface of the semiconductor lightemitting device 100, the semiconductor light emitting device 100 may bedie-bonded through four outer walls (four side surfaces) or one sidesurface selected from the four side surfaces within an angle of 360°.The semiconductor light emitting device 100 may be mounted through theSMT without using an additional wire. Accordingly, all four sidewalls ofthe semiconductor light emitting device 100 can be mounted, and lightcan be emitted in all side directions.

After placing one of the first conductive support member 160 and thesecond conductive support member 162 on a base, the semiconductor lightemitting device 100 can be wire-bonded through the other conductivesupport member. Such a mounting structure may be varied within the scopeof the embodiment.

The first and second openings 160 and 162 are formed in thesemiconductor light emitting device 100, so that heat can be effectivelydischarged.

A portion or the entire portion of the first and second openings 160 and162 of the semiconductor light emitting device 100 may comprise atransmittive material, for example, a transmittive conductive layer or atransmittive insulating material. The transmittive material may compriseat least one of SiO₂, Si₃N₄, Al₂O₃, TiO₂, SiO_(x), SiN_(x), ITO, IZO,IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au,and Ni/IrOx/Au/ITO.

The semiconductor light emitting device 100 may not comprise the firstopenings 165 or the second openings 166. In this case, an amount ofreflected light can be increased.

FIG. 12 is a sectional side view showing a semiconductor light emittingdevice 100A according to a second embodiment. In the followingdescription, the same reference numerals will be assigned to elementsidentical to those of the first embodiment, and details thereof will beomitted in order to avoid redundancy.

Referring to FIG. 12, the semiconductor light emitting device 100Acomprises the light emitting structure 135, the first and secondpassivation layers 140 and 170, the first electrode layer 150, thesecond electrode layer 152, the first conductive support member 160, thesecond conductive support member 162, and a first opening 155B.

The semiconductor light emitting device 100A comprises the first andsecond openings 155B and 156 having different sizes.

The first opening 155B opens an internal top surface of the secondconductive semiconductor layer 130, and the second openings 156 may havea matrix pattern similarly to that of the first embodiment.

The first electrode layer 150 makes contact with the first conductivesupport member 160 by a predetermined width along a circumferenceportion of a top surface of the second conductive semiconductor layer130. The first electrode layer 150 and the first conducive supportmember 160 may have a continuous pattern shape such as a circular frameshape or a polygonal frame shape. Accordingly, an internal area of thefirst electrode layer 150 and the first conductive support member 160 isopened by the first opening 155B.

An ohmic contact layer (not shown) may be formed on the internal topsurface of the second conductive semiconductor layer 130. The ohmiccontact layer electrically makes contact with the first electrode layer150 such that a current is diffused and supplied. In addition, the ohmiccontact layer can emit light upward.

In the semiconductor light emitting device 100A, some portion or theentire portion of the first opening 155B, which is the internal area ofthe first electrode layer 150 and the first conductive support member160, may be filled with a transmittive material, but the embodiment isnot limited thereto.

The semiconductor light emitting device 100A has the same mountingstructure as that of the first embodiment, so that light extractionefficiency can be improved.

Although an internal upper portion of the light emitting structure 135is opened in the semiconductor light emitting device 100A, an internallower portion of the light emitting structure 135 may be opened or anopening part of the second electrode layer formed at the internal lowerportion of the light emitting structure 135 may be removed. Such astructure may be varied within the scope of the embodiment.

FIG. 13 is a sectional side view showing a semiconductor light emittingdevice 100B according to a third embodiment. In the followingdescription, the same reference numerals will be assigned to elementsidentical to those of the first embodiment, and details thereof will beomitted in order to avoid redundancy.

Referring to FIG. 13, the semiconductor light emitting device 100Bcomprises the light emitting structure 135, the first and secondpassivation layers 140 and 170, the first electrode layer 150, thesecond electrode layer 152, the first conductive support member 160, thesecond conductive support member 162, the first opening 155B, and asecond opening 155C

The semiconductor light emitting device 100B comprises a plurality ofthe first and second openings 155B and 155C.

The first opening 155B opens an internal top surface of the secondconductive semiconductor layer 130, and the second opening 155C opens aninternal bottom surface of the first conductive semiconductor layer 110.

The first electrode layer 150 makes contact with the first conductivesupport member 160 by a predetermined width along a circumferenceportion of a top surface of the second conductive semiconductor layer130. The first electrode layer 150 and the first conducive supportmember 160 may have a continuous pattern shape such as a circular frameshape or a polygonal frame shape. Accordingly, an internal area of thefirst electrode layer 150 and the first conductive support member 160 isopened by the first opening 155B.

An ohmic contact layer (not shown) may be formed on the internal topsurface of the second conductive semiconductor layer 130. The ohmiccontact layer electrically makes contact with the first electrode layer150 such that a current can be diffused and supplied. In addition, theohmic contact layer can emit light upward.

The second electrode layer 152 makes contact with the second conductivesupport member 162 by a predetermined width along a circumferenceportion of a bottom surface of the first conductive semiconductor layer110. The second electrode layer 152 and the second conducive supportmember 162 may have a continuous pattern shape such as a circular frameshape or a polygonal frame shape. Accordingly, an internal area of thesecond electrode layer 152 and the second conductive support member 162is opened by the second opening 155C.

In the semiconductor light emitting device 100B, some portions or theentire portion of the first opening 155B, which is the internal area ofthe first electrode layer 150 and the first conductive support member160, may be filled with a transmittive material. Some portions or theentire portion of the second opening 155C, which is the internal area ofthe second electrode layer 152 and the second conductive support member162, may be filled with a transmittive material. However, the embodimentis not limited to the materials.

The semiconductor light emitting device 100B has the same mountingstructure as that of the first embodiment, so that side-directionallight extraction efficiency can be improved.

An embodiment provides a method for manufacturing a semiconductor lightemitting device, the method comprising: forming a light emittingstructure comprising a plurality of compound semiconductor layers on asubstrate; forming a first electrode layer having a first opening parton the light emitting structure; forming a first conductive supportmember having the first opening part on the first electrode layer;removing the substrate under the light emitting structure; forming anpassivation layer around a circumference portion of the light emittingstructure; forming a second electrode layer having a second opening partunder the light emitting structure; and forming a second conductivesupport member having the second opening part under the second electrodelayer.

According to the embodiment, the light emitting device can be packagedthrough four sidewalls thereof or one sidewall selected from the foursidewalls within an angle of 360°. The embodiment can provide avertical-type light emitting device applicable to a side view package ora top view package. The embodiment can provide a vertical-type lightemitting device capable of emitting light in six lateral directions.According to the embodiment, a pad is not required for a light emittingdevice. According to the embodiment, a wire is not used, so that lightinterference caused by the wire does not occur.

As described above, the embodiments can provide a semiconductor lightemitting device such as an LED. According to the embodiments, theelectrical reliability of the semiconductor light emitting device can beimproved. According to the embodiment, the light efficiency of thesemiconductor light emitting device can be improved. According to theembodiment, a light source, to which the semiconductor light emittingdevice is packaged, can be applied to various fields such asillumination, indictors, and displays.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A semiconductor light emitting device comprising: a light emittingstructure including a first conductive type semiconductor layer, andactive layer and a second conductive type semiconductor layer; a firstreflective electrode layer formed on the light emitting structure, thefirst reflective electrode layer comprising a plurality of reflectivepatterns and a plurality of openings between the reflective patterns andhaving a multi-layer comprising at least one selected from the groupconsisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf; asecond reflective electrode layer formed under the light emittingstructure; and an insulating layer formed at an outer sidewall of thelight emitting structure so as to surround a circumference portion ofthe light emitting structure.
 2. The semiconductor light emitting deviceaccording to claim 1, wherein each opening is formed to partially exposethe light emitting structure.
 3. The semiconductor light emitting deviceaccording to claim 1, wherein the reflective patterns are connected toeach other.
 4. The semiconductor light emitting device according toclaim 1, wherein the second reflective electrode layer comprising atleast one selected from the group consisting of Al, Ag, Pd, Rh, and Pt.5. The semiconductor light emitting device according to claim 1, whereinthe insulating layer comprises: a first insulating layer formed at unupper periphery of the second conductive type semiconductor layer; and asecond insulating layer formed at a lower periphery of the firstconductive type semiconductor layer and formed at a sidewall of thelight emitting structure.
 6. The semiconductor light emitting deviceaccording to claim 1, further comprising: a first conductive supportingmember on the first reflective electrode layer; and a second conductivesupporting member under the second reflective electrode layer.
 7. Thesemiconductor light emitting device according to claim 1, wherein theinsulating layer comprises a transparent insulating material.
 8. Thesemiconductor light emitting device according to claim 1, wherein thesecond reflective electrode layer has an opening which is formed toexpose a part of the semiconductor layer of the light emittingstructure.